Photoinduced Phenomena in Thermally Evaporated a-Gex Se90-x Sb10 Thin Films
PDF

Keywords

Amorphous thin films
photoinduced phenomena
optical constants

How to Cite

1.
MA Osman, AM Abosehly, AA Othman, KA Aly. Photoinduced Phenomena in Thermally Evaporated a-Gex Se90-x Sb10 Thin Films. J. Adv. Therm. Sci. Res. [Internet]. 2015 Dec. 31 [cited 2022 May 23];2(2):64-70. Available from: https://www.avantipublishers.com/index.php/jatsr/article/view/316

Abstract

Amorphous Gex Se90-x Sb10 thin films were prepared by thermal evaporation under vacuum onto glass substrates. Reflectance and transmittance were measured in the wavelength range 190-900nm. The optical properties of the as deposited and UV-irradiated films at different exposure times were reported. The compositional dependence of the optical constants (absorption coefficient, the non-direct optical gap Eg, refractive index (n), and the extinction coefficient (k) were evaluated and discussed in terms of the Ge content and the chemical bond network model.

https://doi.org/10.15377/2409-5826.2015.02.02.3
PDF

References

Keirsse J, Boussard-Plédel C, Loreal O, Sire O, Bureau B and Turlin B, et al. Chalcogenide glass fibers used as biosensors. Journal of Non-Crystalline Solids 2003; 326-327: 430-3. http://dx.doi.org/10.1016/S0022-3093(03)00434-4

Popescu M. Disordered chalcogenide optoelectronic materials: Phenomena and applications. Journal of Optoelectronics and Advanced Materials 2005; 7(4): 2189-210.

Aly KA, Abd Elnaeim AM, Afify N and Abousehly AM. Improvement of the electrical properties of Se 3Te 1 thin films by in additions. Journal of Non-Crystalline Solids 2012; 358(20): 2759-63. http://dx.doi.org/10.1016/j.jnoncrysol.2012.06.029

Aly KA, Abd Elnaeim AM, Uosif MAM and Abdel-Rahim O. Optical properties of Ge-As-Te thin films. Physica B: Condensed Matter 2011; 406(22): 4227-32. http://dx.doi.org/10.1016/j.physb.2011.08.013

Tanaka K. Structural phase transitions in chalcogenide glasses. Physical Review B. 1989; 39(2): 1270-9. http://dx.doi.org/10.1103/PhysRevB.39.1270

Abdel-Rahim MA, Hafiz MM and Mahmoud AZ. Effect of Sb additive on structural and optical properties of Se–Te–Sb thin films. Appl Phys A 2015; 118: 981-8. http://dx.doi.org/10.1007/s00339-014-8853-x

Chander R and Thangaraj R. Thermal and optical analysis of Te-substituted Sn–Sb–Se chalcogenide semiconductors Appl Phys A 2010; 99: 181-7. http://dx.doi.org/10.1007/s00339-009-5486-6

Dikova J, Todorov R and Babeva T. Vacuum deposited GeSbSe thin films for photonic applications. Journal of Physics: Conference Series 2012; 356(1). http://dx.doi.org/10.1088/1742-6596/356/1/012023

Kawaguchi T, Maruno S and Tanaka K. Composition dependence of photoinduced and thermally induced bleachings of amorphous Ge-S and Ge-S-Ag films. Journal of Applied Physics 1993; 73(9): 4560-6. http://dx.doi.org/10.1063/1.352771

Liu Q and Gan F. Photoinduced changes of structure and properties in amorphous GeSe2 films. Guangxue Xuebao/Acta Optica Sinica 2002; 22(5): 636-40.

Shim GM, Kim D and Choi MY. Optimal storage capacity of neural networks at finite temperatures. Journal of Physics A: Mathematical and General 1993; 26(15): 3741-55. http://dx.doi.org/10.1088/0305-4470/26/15/024

Mongia G and Bhatnagar PK. Crystallization kinetics in (AgSbTe)x(In1-ySb y)1-x films used in optical data storage. Journal of Materials Science 2006; 41(8): 2477-82. http://dx.doi.org/10.1007/s10853-006-5091-4

Kolodziejski LA, Gunshor RL, Otsuka N, Choi C, editors. EPITAXY OF CdTe ON (100) GaAs1986; Boston, MA, USA: Materials Research Soc.

Kolodziejski LA, Gunshor RL, Otsuka N, Gu BP, Hefetz Y and Nurmikko AV. Use of Rheed oscillations for the growth of 2D magnetic semiconductor superlattices (MnSe/ZnSe). Journal of Crystal Growth 1987; 81(1-4): 491-4. http://dx.doi.org/10.1016/0022-0248(87)90439-8

Vlček M, TichyÅL L, Klikorka J and Tříska A. Optical properties of Ge40-xSbxSe60 glasses. Journal of Materials Science 1989; 24(7): 2508-12. http://dx.doi.org/10.1007/BF01174521

Vlček M, Raptis C, Wagner T, Vidourek A, Frumar M and Kotsalas IP, et al. Photo- And thermally induced phenomena in amorphous Ge30Sb 10S60 films. Journal of Non- Crystalline Solids 1995; 192-193: 669-73. http://dx.doi.org/10.1016/0022-3093(95)00457-2

Shimakawa K, Kolobov A and Elliott SR. Photoinduced effects and metastability in amorphous semiconductors and insulators. Advances in Physics 1995; 44(6): 475-588. http://dx.doi.org/10.1080/00018739500101576

Tanaka K and Ohtsuka Y. Transient characteristics of photodarkening in amorphous As-S films. Thin Solid Films 1976; 33(3): 309-13. http://dx.doi.org/10.1016/0040-6090(76)90100-0

Tichy L, Ticha H, Handlir K and Jurek K. Photoinduced and thermally induced bleaching of amorphous Ge-S films. Philosophical Magazine Letters 1988; 58(5): 233-7. http://dx.doi.org/10.1080/09500838808214758

Tichy L, Ticha H, Vlcek M, Klikorka J and Jurek K. Photoinduced Bleaching Of Amorphous Film Ge//4//0S//6//0. Journal of Materials Science Letters 1986; 5(11): 1125-8. http://dx.doi.org/10.1007/BF01742220

Singh J and Tanaka K. Photo-structural changes in chalcogenide glasses during illumination. Journal of Materials Science: Materials in Electronics 2007; 18 (SUPPL.1): 423-8. http://dx.doi.org/10.1007/s10854-007-9226-4

Florescu DI and Cappelletti RL. Photobleaching in a g- Ge0.27Sn0.03Se0.7 thin film. Journal of Non-Crystalline Solids 1999; 243(2-3): 204-8. http://dx.doi.org/10.1016/S0022-3093(98)00827-8

Aly KA, Abousehly AM, Osman MA and Othman AA. Structure, optical and electrical properties of Ge30Sb10Se60 thin films. Physica B: Condensed Matter 2008; 403(10-11): 1848-53. http://dx.doi.org/10.1016/j.physb.2007.10.019

Ganjoo A, Ikeda Y and Shimakawa K. In situ photoexpansion measurements of amorphous As2S3 films: Role of photocarriers. Applied Physics Letters 1999; 74(15): 2119-21. http://dx.doi.org/10.1063/1.123775

Tauc J. Electronic properties of amorphous materials. Science 1967; 158(3808): 1543-8. http://dx.doi.org/10.1126/science.158.3808.1543

Shimakawa K, Yoshida N, Ganjoo A, Kuzukawa Y and Singh J. A model for the photostructural changes in amorphous chalcogenides. Philosophical Magazine Letters 1998; 77(3): 153-8. http://dx.doi.org/10.1080/095008398178598

Tanaka K. Photoexpansion in As2S3 glass. Physical Review B - Condensed Matter and Materials Physics 1998; 57(9): 5163-7. http://dx.doi.org/10.1103/PhysRevB.57.5163

Sharma P, Dahshan A and Aly KA. New quaternary Ge-Se- Sb-Ag optical materials: Blue shift in absorption edge and evaluation of optical parameters. Journal of Alloys and Compounds 2014; 616: 323-7. http://dx.doi.org/10.1016/j.jallcom.2014.07.123

TichyÅL L and Tichá H. Covalent bond approach to the glass transition temperature of chalcogenide glasses. Journal of Non-Crystalline Solids 1995; 189(1-2): 141-6. http://dx.doi.org/10.1016/0022-3093(95)00202-2

Dahshan A and Aly KA. Characterization of new quaternary Ge20Se60Sb20 - XAgx (0 ≤ x ≤ 20 at.%) glasses. Journal of Non-Crystalline Solids 2015; 408: 62-5. http://dx.doi.org/10.1016/j.jnoncrysol.2014.10.015

Giridhar A and Mahadevan S. The Tg versus Z dependence of glasses of the GeInSe system. Journal of Non-Crystalline Solids 1992; 151(3): 245-52. http://dx.doi.org/10.1016/0022-3093(92)90036-J

Madhusoodanan KN, Nandakumar K, Philip J, Titus SSK, Asokan S and Gopal ESR. Photoacoustic investigation of glass transition in AsxTe1-x glasses. Physica Status Solidi (A) Applied Research 1989; 114(2): 525-30. http://dx.doi.org/10.1002/pssa.2211140213

Pauling L. Nature of the Chemical Bond New York: Cornell University, Press Ithaca; 1960.

Shimakawa K. On the correlation between electrical conduction and dielectric relaxation in oxide glasses. Journal of Non-Crystalline Solids 1981; 43(1): 145-9. http://dx.doi.org/10.1016/0022-3093(81)90181-2

Nemanich RJ, Connell GAN, Hayes TM and Street RA. Thermally induced effects in evaporated chalcogenide films. I. Structure. Physical Review B 1978; 18(12): 6900-14. http://dx.doi.org/10.1103/PhysRevB.18.6900

Goyal DR and Maan AS. Far-infrared absorption in amorphous Sb15GexSe85 - x glasses. Journal of Non- Crystalline Solids 1995; 183(1-2): 182-5. http://dx.doi.org/10.1016/0022-3093(94)00550-8

Mahadevan S and Giridhar A. Floppy to rigid transition and chemical ordering in Ge{single bond}Sb(As){single bond}Se glasses. Journal of Non-Crystalline Solids 1992; 143(C): 52-8. http://dx.doi.org/10.1016/S0022-3093(05)80552-6

Giridhar A and Mahadevan S. Topological transitions and chemical ordering in GeInSe glasses. Journal of Non- Crystalline Solids 1991; 134(1-2): 94-9. http://dx.doi.org/10.1016/0022-3093(91)90015-X

Kumar P and Thangaraj R. Glassy state and structure of Sn- Sb-Se chalcogenide alloy. Journal of Non-Crystalline Solids 2006; 352(21-22): 2288-91. http://dx.doi.org/10.1016/j.jnoncrysol.2006.02.041