Photoinduced Phenomena in Thermally Evaporated a-Gex Se90-x Sb10 Thin Films

Authors

  • MA Osman Assiut University, Assiut 71524, Egypt
  • AM Abosehly Al-Azhar University, Assuit, Egypt
  • AA Othman Assiut University, Assiut 71524, Egypt
  • KA Aly University of Jeddah, P.O. Box 80200, 21589 Khulais, Saudi Arabia

DOI:

https://doi.org/10.15377/2409-5826.2015.02.02.3

Keywords:

Amorphous thin films, photoinduced phenomena, optical constants

Abstract

Amorphous Gex Se90-x Sb10 thin films were prepared by thermal evaporation under vacuum onto glass substrates. Reflectance and transmittance were measured in the wavelength range 190-900nm. The optical properties of the as deposited and UV-irradiated films at different exposure times were reported. The compositional dependence of the optical constants (absorption coefficient, the non-direct optical gap Eg, refractive index (n), and the extinction coefficient (k) were evaluated and discussed in terms of the Ge content and the chemical bond network model.

Author Biographies

MA Osman, Assiut University, Assiut 71524, Egypt

Faculty of Science, Physics Department

AM Abosehly, Al-Azhar University, Assuit, Egypt

Faculty of Science, Chemistry Department

AA Othman, Assiut University, Assiut 71524, Egypt

Faculty of Science, Physics Department

KA Aly, University of Jeddah, P.O. Box 80200, 21589 Khulais, Saudi Arabia

Physics Department, Faculty of Science and Arts

References

Keirsse J, Boussard-Plédel C, Loreal O, Sire O, Bureau B and Turlin B, et al. Chalcogenide glass fibers used as biosensors. Journal of Non-Crystalline Solids 2003; 326-327: 430-3. http://dx.doi.org/10.1016/S0022-3093(03)00434-4

Popescu M. Disordered chalcogenide optoelectronic materials: Phenomena and applications. Journal of Optoelectronics and Advanced Materials 2005; 7(4): 2189-210.

Aly KA, Abd Elnaeim AM, Afify N and Abousehly AM. Improvement of the electrical properties of Se 3Te 1 thin films by in additions. Journal of Non-Crystalline Solids 2012; 358(20): 2759-63. http://dx.doi.org/10.1016/j.jnoncrysol.2012.06.029

Aly KA, Abd Elnaeim AM, Uosif MAM and Abdel-Rahim O. Optical properties of Ge-As-Te thin films. Physica B: Condensed Matter 2011; 406(22): 4227-32. http://dx.doi.org/10.1016/j.physb.2011.08.013

Tanaka K. Structural phase transitions in chalcogenide glasses. Physical Review B. 1989; 39(2): 1270-9. http://dx.doi.org/10.1103/PhysRevB.39.1270

Abdel-Rahim MA, Hafiz MM and Mahmoud AZ. Effect of Sb additive on structural and optical properties of Se–Te–Sb thin films. Appl Phys A 2015; 118: 981-8. http://dx.doi.org/10.1007/s00339-014-8853-x

Chander R and Thangaraj R. Thermal and optical analysis of Te-substituted Sn–Sb–Se chalcogenide semiconductors Appl Phys A 2010; 99: 181-7. http://dx.doi.org/10.1007/s00339-009-5486-6

Dikova J, Todorov R and Babeva T. Vacuum deposited GeSbSe thin films for photonic applications. Journal of Physics: Conference Series 2012; 356(1). http://dx.doi.org/10.1088/1742-6596/356/1/012023

Kawaguchi T, Maruno S and Tanaka K. Composition dependence of photoinduced and thermally induced bleachings of amorphous Ge-S and Ge-S-Ag films. Journal of Applied Physics 1993; 73(9): 4560-6. http://dx.doi.org/10.1063/1.352771

Liu Q and Gan F. Photoinduced changes of structure and properties in amorphous GeSe2 films. Guangxue Xuebao/Acta Optica Sinica 2002; 22(5): 636-40.

Shim GM, Kim D and Choi MY. Optimal storage capacity of neural networks at finite temperatures. Journal of Physics A: Mathematical and General 1993; 26(15): 3741-55. http://dx.doi.org/10.1088/0305-4470/26/15/024

Mongia G and Bhatnagar PK. Crystallization kinetics in (AgSbTe)x(In1-ySb y)1-x films used in optical data storage. Journal of Materials Science 2006; 41(8): 2477-82. http://dx.doi.org/10.1007/s10853-006-5091-4

Kolodziejski LA, Gunshor RL, Otsuka N, Choi C, editors. EPITAXY OF CdTe ON (100) GaAs1986; Boston, MA, USA: Materials Research Soc.

Kolodziejski LA, Gunshor RL, Otsuka N, Gu BP, Hefetz Y and Nurmikko AV. Use of Rheed oscillations for the growth of 2D magnetic semiconductor superlattices (MnSe/ZnSe). Journal of Crystal Growth 1987; 81(1-4): 491-4. http://dx.doi.org/10.1016/0022-0248(87)90439-8

Vlček M, TichyÅL L, Klikorka J and Tříska A. Optical properties of Ge40-xSbxSe60 glasses. Journal of Materials Science 1989; 24(7): 2508-12. http://dx.doi.org/10.1007/BF01174521

Vlček M, Raptis C, Wagner T, Vidourek A, Frumar M and Kotsalas IP, et al. Photo- And thermally induced phenomena in amorphous Ge30Sb 10S60 films. Journal of Non- Crystalline Solids 1995; 192-193: 669-73. http://dx.doi.org/10.1016/0022-3093(95)00457-2

Shimakawa K, Kolobov A and Elliott SR. Photoinduced effects and metastability in amorphous semiconductors and insulators. Advances in Physics 1995; 44(6): 475-588. http://dx.doi.org/10.1080/00018739500101576

Tanaka K and Ohtsuka Y. Transient characteristics of photodarkening in amorphous As-S films. Thin Solid Films 1976; 33(3): 309-13. http://dx.doi.org/10.1016/0040-6090(76)90100-0

Tichy L, Ticha H, Handlir K and Jurek K. Photoinduced and thermally induced bleaching of amorphous Ge-S films. Philosophical Magazine Letters 1988; 58(5): 233-7. http://dx.doi.org/10.1080/09500838808214758

Tichy L, Ticha H, Vlcek M, Klikorka J and Jurek K. Photoinduced Bleaching Of Amorphous Film Ge//4//0S//6//0. Journal of Materials Science Letters 1986; 5(11): 1125-8. http://dx.doi.org/10.1007/BF01742220

Singh J and Tanaka K. Photo-structural changes in chalcogenide glasses during illumination. Journal of Materials Science: Materials in Electronics 2007; 18 (SUPPL.1): 423-8. http://dx.doi.org/10.1007/s10854-007-9226-4

Florescu DI and Cappelletti RL. Photobleaching in a g- Ge0.27Sn0.03Se0.7 thin film. Journal of Non-Crystalline Solids 1999; 243(2-3): 204-8. http://dx.doi.org/10.1016/S0022-3093(98)00827-8

Aly KA, Abousehly AM, Osman MA and Othman AA. Structure, optical and electrical properties of Ge30Sb10Se60 thin films. Physica B: Condensed Matter 2008; 403(10-11): 1848-53. http://dx.doi.org/10.1016/j.physb.2007.10.019

Ganjoo A, Ikeda Y and Shimakawa K. In situ photoexpansion measurements of amorphous As2S3 films: Role of photocarriers. Applied Physics Letters 1999; 74(15): 2119-21. http://dx.doi.org/10.1063/1.123775

Tauc J. Electronic properties of amorphous materials. Science 1967; 158(3808): 1543-8. http://dx.doi.org/10.1126/science.158.3808.1543

Shimakawa K, Yoshida N, Ganjoo A, Kuzukawa Y and Singh J. A model for the photostructural changes in amorphous chalcogenides. Philosophical Magazine Letters 1998; 77(3): 153-8. http://dx.doi.org/10.1080/095008398178598

Tanaka K. Photoexpansion in As2S3 glass. Physical Review B - Condensed Matter and Materials Physics 1998; 57(9): 5163-7. http://dx.doi.org/10.1103/PhysRevB.57.5163

Sharma P, Dahshan A and Aly KA. New quaternary Ge-Se- Sb-Ag optical materials: Blue shift in absorption edge and evaluation of optical parameters. Journal of Alloys and Compounds 2014; 616: 323-7. http://dx.doi.org/10.1016/j.jallcom.2014.07.123

TichyÅL L and Tichá H. Covalent bond approach to the glass transition temperature of chalcogenide glasses. Journal of Non-Crystalline Solids 1995; 189(1-2): 141-6. http://dx.doi.org/10.1016/0022-3093(95)00202-2

Dahshan A and Aly KA. Characterization of new quaternary Ge20Se60Sb20 - XAgx (0 ≤ x ≤ 20 at.%) glasses. Journal of Non-Crystalline Solids 2015; 408: 62-5. http://dx.doi.org/10.1016/j.jnoncrysol.2014.10.015

Giridhar A and Mahadevan S. The Tg versus Z dependence of glasses of the GeInSe system. Journal of Non-Crystalline Solids 1992; 151(3): 245-52. http://dx.doi.org/10.1016/0022-3093(92)90036-J

Madhusoodanan KN, Nandakumar K, Philip J, Titus SSK, Asokan S and Gopal ESR. Photoacoustic investigation of glass transition in AsxTe1-x glasses. Physica Status Solidi (A) Applied Research 1989; 114(2): 525-30. http://dx.doi.org/10.1002/pssa.2211140213

Pauling L. Nature of the Chemical Bond New York: Cornell University, Press Ithaca; 1960.

Shimakawa K. On the correlation between electrical conduction and dielectric relaxation in oxide glasses. Journal of Non-Crystalline Solids 1981; 43(1): 145-9. http://dx.doi.org/10.1016/0022-3093(81)90181-2

Nemanich RJ, Connell GAN, Hayes TM and Street RA. Thermally induced effects in evaporated chalcogenide films. I. Structure. Physical Review B 1978; 18(12): 6900-14. http://dx.doi.org/10.1103/PhysRevB.18.6900

Goyal DR and Maan AS. Far-infrared absorption in amorphous Sb15GexSe85 - x glasses. Journal of Non- Crystalline Solids 1995; 183(1-2): 182-5. http://dx.doi.org/10.1016/0022-3093(94)00550-8

Mahadevan S and Giridhar A. Floppy to rigid transition and chemical ordering in Ge{single bond}Sb(As){single bond}Se glasses. Journal of Non-Crystalline Solids 1992; 143(C): 52-8. http://dx.doi.org/10.1016/S0022-3093(05)80552-6

Giridhar A and Mahadevan S. Topological transitions and chemical ordering in GeInSe glasses. Journal of Non- Crystalline Solids 1991; 134(1-2): 94-9. http://dx.doi.org/10.1016/0022-3093(91)90015-X

Kumar P and Thangaraj R. Glassy state and structure of Sn- Sb-Se chalcogenide alloy. Journal of Non-Crystalline Solids 2006; 352(21-22): 2288-91. http://dx.doi.org/10.1016/j.jnoncrysol.2006.02.041

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Published

2015-12-31

How to Cite

1.
MA Osman, AM Abosehly, AA Othman, KA Aly. Photoinduced Phenomena in Thermally Evaporated a-Gex Se90-x Sb10 Thin Films. J. Adv. Therm. Sci. Res. [Internet]. 2015Dec.31 [cited 2021Sep.26];2(2):64-70. Available from: https://www.avantipublishers.com/jms/index.php/jatsr/article/view/316

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